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Global Silicon Carbide Suppliers Leadership and Strategic Positioning Report 2020 - ResearchAndMarkets.com

·3-min read

The "Leadership Quadrant and Strategic Positioning of Silicon Carbide Suppliers" report has been added to ResearchAndMarkets.com's offering.

This report offers a full competitive analysis from target markets to product mapping, from selling strategies to production capabilities.

In this research study, eight companies such as as Infineon Technologies, RoHM Semiconductor, STMicroelectronics, ON Semiconductor, Toshiba, General Electric, Fuji Electric, Ltd., and Renesas Electronics. The eight profiled manufacturers are grouped in the quadrant. The leadership quadrant analyzes the relative strength among these players. The leadership quadrant addresses the need in the market for manufacturer evaluation based on objective data and metrics. Firms that produce silicon carbide are approaching market opportunities with starkly different strategies.

The silicon carbide manufacture landscape is diverse and continually evolving. Major players in the the the the the silicon carbide market have diversified product portfolios, strong geographical reach, and have made several strategic initiatives. The dynamics of the silicon carbide market extends beyond routine macro-economic elements of supply and demand. It is the relationship between buyer's needs and seller's capabilities as well as the macroeconomic forces at work that affect the market. It is how well and how efficiently the sellers meet the needs of the buyers that determine long-term success.

Over the years, the level of demand for silicon carbide has increased due to growing application of SiC devices in RF and cellular base station. Silicon carbide is used for a variety of end-use industries, such as telecommunications, energy and power, automotive, renewable power generation, power electronics, and others. and is forecast to grow at a CAGR of 17%.

The major growth drivers for this market are increasing demand for motor drives, growing application of SiC devices in RF and cellular base station, and increasing use of SiC in semiconductor to perform at high temperature and high voltage environment.

Key Topics Covered:

1. Leadership Analysis

1.1: Market Description

1.2: Scoring Criteria

1.3: Leadership Quadrant Analysis

1.3.1: Leaders (Top Right)

1.3.2: Contenders (Bottom Right)

1.3.3: Visionaries (Top Left)

1.3.4: Specialists (Lower Left)

2. Competitive Benchmarking

2.1: Product Portfolio Analysis

2.2: Financial Strength

2.3: Market Share Analysis

2.3.1: Market Share in Various Segments

2.3.2: Market Share in Various Regions

3. Infineon Technologies Profile

3.1: Company Overview

3.1.1: Infineon Technologies Company Description and Business Segments

3.1.2: Infineon Technologies Company Statistics

3.2: Silicon Carbide Business Overview

3.2.1: Silicon Carbide Business Segment

3.2.2: Global Silicon Carbide Operations

3.2.3: Key Differentiators and Strengths

3.3: Products and Product Positioning

3.3.1: Product Line Overview

3.3.2: Silicon Carbide Product Mapping

3.3.3: Product Positioning in Market Segments

3.4: Markets and Market Positioning

3.4.1: Market Position in Global Silicon Carbide Business

3.5: Revenue Breakdown by Market Segments

3.6: Revenue Breakdown by Regions

3.7: Production

3.7.1: Global Manufacturing Operations

3.8: Innovation and Market Leadership

3.9: Marketing, Sales, and Organizational Capabilities

3.9.1: Marketing and Sales

3.9.2: Management Commitment and Track Record

3.10: Financial Strength

4. RoHM Semiconductor Profile

5. STMicroelectronics Profile

6. ON Semiconductor Profile

7. Toshiba Profile

8. General Electric Profile

9. Fuji Electric Profile

10. Renesas Electronics Profile

For more information about this report visit https://www.researchandmarkets.com/r/si1ram

View source version on businesswire.com: https://www.businesswire.com/news/home/20201027005572/en/

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